All IGBT. HGTG12N60C3DR Datasheet

 

HGTG12N60C3DR IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTG12N60C3DR
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 24 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 37 nS
   Package: TO247

 HGTG12N60C3DR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG12N60C3DR Datasheet (PDF)

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HGTG12N60C3DR HGTG12N60C3DR

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 hgtg12n60c3d.pdf

HGTG12N60C3DR HGTG12N60C3DR

HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

 2.2. Size:342K  onsemi
 hgtg12n60c3d.pdf

HGTG12N60C3DR HGTG12N60C3DR

UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode24 A, 600 VHGTG12N60C3Dwww.onsemi.comThe HGTG12N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies

 2.3. Size:102K  harris semi
 hgtg12n60c3d .pdf

HGTG12N60C3DR HGTG12N60C3DR

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

 2.4. Size:106K  harris semi
 hgtg12n60c3d.pdf

HGTG12N60C3DR HGTG12N60C3DR

S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit

Datasheet: HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , CRG75T60AK3HD , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 .

 

 
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