HGTG12N60C3DR PDF and Equivalents Search

 

HGTG12N60C3DR Specs and Replacement


   Type Designator: HGTG12N60C3DR
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 104 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 24 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   tr ⓘ - Rise Time, typ: 37 nS
   Package: TO247
 

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HGTG12N60C3DR datasheet

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HGTG12N60C3DR

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 2.1. Size:120K  fairchild semi
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HGTG12N60C3DR

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has t... See More ⇒

 2.2. Size:342K  onsemi
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HGTG12N60C3DR

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V HGTG12N60C3D www.onsemi.com The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar C transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies... See More ⇒

 2.3. Size:102K  harris semi
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HGTG12N60C3DR

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO... See More ⇒

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Specs: HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , GT30F133 , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 .

Keywords - HGTG12N60C3DR transistor spec

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