All IGBT. HGTG12N60C3DR Datasheet

 

HGTG12N60C3DR IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG12N60C3DR

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 24

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG12N60C3DR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG12N60C3DR Datasheet (PDF)

2.1. hgtg12n60c3d.pdf Size:120K _fairchild_semi

HGTG12N60C3DR
HGTG12N60C3DR

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has t

2.2. hgtg12n60c3d .pdf Size:102K _harris_semi

HGTG12N60C3DR
HGTG12N60C3DR

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MO

 2.3. hgtg12n60c3d.pdf Size:106K _harris_semi

HGTG12N60C3DR
HGTG12N60C3DR

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage swit

Datasheet: HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , STGB10NB37LZ , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 .

 

 
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