Справочник IGBT. HGTG12N60C3DR

 

HGTG12N60C3DR - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTG12N60C3DR
   Тип транзистора: IGBT + Diode
   Маркировка: 12N60C3DR
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 24 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 37 nS
   Qgⓘ - Общий заряд затвора, typ: 50 nC
   Тип корпуса: TO247

 Аналог (замена) для HGTG12N60C3DR

 

 

HGTG12N60C3DR Datasheet (PDF)

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HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t

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UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode24 A, 600 VHGTG12N60C3Dwww.onsemi.comThe HGTG12N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies

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S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO

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S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit

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