All IGBT. MMG100HB060H6EN Datasheet

 

MMG100HB060H6EN IGBT. Datasheet pdf. Equivalent


   Type Designator: MMG100HB060H6EN
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Package: MODULE

 MMG100HB060H6EN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MMG100HB060H6EN Datasheet (PDF)

 0.1. Size:292K  macmic
 mmg100hb060h6en.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 3.1. Size:176K  macmic
 mmg100hb060b6en.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 6.1. Size:227K  macmic
 mmg100hb120h6hn.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin

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