MMG100HB060H6EN Datasheet and Replacement
Type Designator: MMG100HB060H6EN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 330 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 20 nS
Package: MODULE
- IGBT Cross-Reference
MMG100HB060H6EN Datasheet (PDF)
mmg100hb060h6en.pdf

MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb060b6en.pdf

MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg100hb120h6hn.pdf

MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - MMG100HB060H6EN transistor datasheet
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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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