Справочник IGBT. MMG100HB060H6EN

 

MMG100HB060H6EN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: MMG100HB060H6EN

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 330

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 100

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8

Максимальная температура перехода (Tj), ℃: 175

Время нарастания типовое (tr), nS: 20

Тип корпуса: MODULE

Аналог (замена) для MMG100HB060H6EN

 

 

MMG100HB060H6EN Datasheet (PDF)

 0.1. Size:292K  macmic
 mmg100hb060h6en.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 3.1. Size:176K  macmic
 mmg100hb060b6en.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 6.1. Size:227K  macmic
 mmg100hb120h6hn.pdf

MMG100HB060H6EN MMG100HB060H6EN

MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin

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