Справочник IGBT. MMG100HB060H6EN

 

MMG100HB060H6EN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMG100HB060H6EN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 330
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 100
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.8
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 20
   Тип корпуса: MODULE

 Аналог (замена) для MMG100HB060H6EN

 

 

MMG100HB060H6EN Datasheet (PDF)

 0.1. Size:292K  macmic
mmg100hb060h6en.pdf

MMG100HB060H6EN
MMG100HB060H6EN

MMG100HB060H6EN600V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 3.1. Size:176K  macmic
mmg100hb060b6en.pdf

MMG100HB060H6EN
MMG100HB060H6EN

MMG100HB060B6EN600V 100A IGBT ModuleFebruary 2017 Version 2 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 6.1. Size:227K  macmic
mmg100hb120h6hn.pdf

MMG100HB060H6EN
MMG100HB060H6EN

MMG100HB120H6HN1200V 100A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switchin

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