All IGBT. STGW60V60DF Datasheet

 

STGW60V60DF Datasheet and Replacement


   Type Designator: STGW60V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GW60V60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 280 pF
   Qgⓘ - Total Gate Charge, typ: 334 nC
   Package: TO247
      - IGBT Cross-Reference

 

STGW60V60DF Datasheet (PDF)

 ..1. Size:1625K  st
stgw60v60df stgwa60v60df stgwt60v60df.pdf pdf_icon

STGW60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A332211 Tight parameter distributionTO-247TO-247 long leads Safe parallelingTAB Low thermal resistan

 ..2. Size:1723K  st
stgw60v60df.pdf pdf_icon

STGW60V60DF

STGW60V60DF, STGWT60V60DFTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution33 Safe paralleling221 Low thermal resistance1 Very fast soft recovery antipa

 5.1. Size:1323K  st
stgw60v60f.pdf pdf_icon

STGW60V60DF

STGW60V60FTrench gate field-stop IGBT, V series 600 V, 60 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution3 Safe paralleling21 Low thermal resistance Lead free packageTO-247Applications Photovoltaic in

 8.1. Size:1574K  st
stgw60h65dfb.pdf pdf_icon

STGW60V60DF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFBTrench gate field-stop IGBT, HB series 650 V, 60 A high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3322 VCE(sat) = 1.6 V (typ.) @ IC = 60 A11TO-3PTO-247 Tight parameters distribution Safe paralleling

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: RJP63F3DPP-M0

Keywords - STGW60V60DF transistor datasheet

 STGW60V60DF cross reference
 STGW60V60DF equivalent finder
 STGW60V60DF lookup
 STGW60V60DF substitution
 STGW60V60DF replacement

 

 
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