STGW60V60DF PDF and Equivalents Search

 

STGW60V60DF Specs and Replacement

Type Designator: STGW60V60DF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 280 pF

Package: TO247

 STGW60V60DF Substitution

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STGW60V60DF datasheet

 ..1. Size:1625K  st
stgw60v60df stgwa60v60df stgwt60v60df.pdf pdf_icon

STGW60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A 3 3 2 2 1 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistan... See More ⇒

 ..2. Size:1723K  st
stgw60v60df.pdf pdf_icon

STGW60V60DF

STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution 3 3 Safe paralleling 2 2 1 Low thermal resistance 1 Very fast soft recovery antipa... See More ⇒

 5.1. Size:1323K  st
stgw60v60f.pdf pdf_icon

STGW60V60DF

STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameters distribution 3 Safe paralleling 2 1 Low thermal resistance Lead free package TO-247 Applications Photovoltaic in... See More ⇒

 8.1. Size:1574K  st
stgw60h65dfb.pdf pdf_icon

STGW60V60DF

STGW60H65DFB, STGWA60H65DFB STGWT60H65DFB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data Features TAB Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 3 2 2 VCE(sat) = 1.6 V (typ.) @ IC = 60 A 1 1 TO-3P TO-247 Tight parameters distribution Safe paralleling ... See More ⇒

Specs: MMG75S060B6EN , STGW25H120DF2 , STGW25H120F2 , STGW25S120DF3 , STGW28IH125DF , STGW60H60DLFB , STGW60H65DFB , STGW60H65FB , IRGP4063D , STGW60V60F , STGWA25H120DF2 , STGWA25H120F2 , STGWA25S120DF3 , STGWA60H65DFB , STGWT28IH125DF , STGWT60H60DLFB , STGWT60H65DFB .

Keywords - STGW60V60DF transistor spec

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