NGTG25N120FL2WG Datasheet and Replacement
Type Designator: NGTG25N120FL2WG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 74 nS
Coesⓘ - Output Capacitance, typ: 151 pF
Package: TO247
- IGBT Cross-Reference
NGTG25N120FL2WG Datasheet (PDF)
ngtg25n120fl2wg.pdf

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V
ngtg25n120fl2.pdf

NGTG25N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures25 A, 1200 V
Datasheet: NGTB30N120IHRWG , NGTB40N120IHR , NGTB40N120IHRWG , NGTB25N120FL2 , NGTB25N120FL2WG , NGTB25N120S , NGTB25N120SWG , NGTG25N120FL2 , CRG60T60AK3HD , NGTB20N135IHR , NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 .
History: IRG4IBC20FD | IXST35N120B | NCE75ED65VTP | MSG100D350FHS | MDI200-12A4 | MSG20T65HPT1 | MSG40T120FQC
Keywords - NGTG25N120FL2WG transistor datasheet
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History: IRG4IBC20FD | IXST35N120B | NCE75ED65VTP | MSG100D350FHS | MDI200-12A4 | MSG20T65HPT1 | MSG40T120FQC



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