HGTG20N120E2 Specs and Replacement
Type Designator: HGTG20N120E2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 34 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: TO247
HGTG20N120E2 Substitution
HGTG20N120E2 specs
hgtg20n120e2.pdf
S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1200V Latch Free Operation EMITTER Typical Fall Time - 780ns COLLECTOR GATE High Input Impedance COLLECTOR Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best ... See More ⇒
hgtg20n120.pdf
S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1200V Latch Free Operation EMITTER Typical Fall Time - 780ns COLLECTOR GATE High Input Impedance COLLECTOR Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best ... See More ⇒
Specs: HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , IHW40T60 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R .
History: HGTG12N60A4D
Keywords - HGTG20N120E2 transistor spec
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History: HGTG12N60A4D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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