HGTG20N120E2 IGBT. Datasheet pdf. Equivalent

   Type Designator: HGTG20N120E2
   Type: IGBT
   Marking Code: G20N120E2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 34 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 150 nS
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: TO247

HGTG20N120E2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG20N120E2 Datasheet (PDF)

..1. Size:79K 1
hgtg20n120e2.pdf

S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best

4.1. Size:316K 1
hgtg20n120cnd.pdf