STGWA40H120DF2 Specs and Replacement
Type Designator: STGWA40H120DF2
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 468 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Package: TO247
STGWA40H120DF2 Substitution - IGBT ⓘ Cross-Reference Search
STGWA40H120DF2 datasheet
stgwa40h120df2.pdf
STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 TO... See More ⇒
stgw40h120df2 stgwa40h120df2.pdf
STGW40H120DF2, STGWA40H120DF2 Trench gate field-stop IGBT, H series 1200 V, 40 A high speed Datasheet - production data Features Maximum junction temperature T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) @ I = 40 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Safe paralleling Very... See More ⇒
stgwa40h65dfb.pdf
STGWA40H65DFB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist... See More ⇒
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf
STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 2 3 1 2 High speed switching series 1 TO-3PF TO-247 Minimized tail current Very low saturation voltage VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling 3 2 1 Tight parameter distributio... See More ⇒
Specs: NGTB20N135IHRWG , NGTB30N135IHR , NGTB30N135IHRWG , NGTB40N135IHR , NGTB40N135IHRWG , STGW40H120DF2 , STGW40H120F2 , STGW40M120DF3 , TGAN20N135FD , STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB .
History: STGWA40S120DF3 | MMG100D120B6TN | MMG100S120B6UN | MMG150S060B6N
Keywords - STGWA40H120DF2 transistor spec
STGWA40H120DF2 cross reference
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History: STGWA40S120DF3 | MMG100D120B6TN | MMG100S120B6UN | MMG150S060B6N
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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