STGWT80H65DFB Spec and Replacement, IGBT Equivalent Finder, Cross Reference

STGWT80H65DFB Specs and Replacement

Type Designator: STGWT80H65DFB

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 469 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 52 nS

Coesⓘ - Output Capacitance, typ: 385 pF

Package: TO3P

STGWT80H65DFB Substitution

- IGBT ⓘ Cross-Reference Search

STGWT80H65DFB datasheet

..1. Size:663K st
stgw80h65dfb stgwt80h65dfb.pdf pdf_icon

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 2 3 Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 80 A 1 2 1 Tight parameter distribution TO-247 TO-3P Safe paralleling Positive VCE(s... See More ⇒

..2. Size:1459K st
stgwt80h65dfb.pdf pdf_icon

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 3 2 2 1 1 VCE(sat) = 1.6 V (typ.) @ IC = 80 A Max247 TO-247 Tight parameter distribution TAB Safe par... See More ⇒

4.1. Size:1471K st
stgwt80h65fb.pdf pdf_icon

STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low... See More ⇒

7.1. Size:1643K st
stgwt80v60f.pdf pdf_icon

STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applicati... See More ⇒