STGWT80H65DFB - аналоги, параметры транзистора

STGWT80H65DFB даташит

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STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 2 3 Low saturation voltage VCE(sat) = 1.6 V (typ.) @ IC = 80 A 1 2 1 Tight parameter distribution TO-247 TO-3P Safe paralleling Positive VCE(s

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STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 3 2 2 1 1 VCE(sat) = 1.6 V (typ.) @ IC = 80 A Max247 TO-247 Tight parameter distribution TAB Safe par

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STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A 3 3 Tight parameter distribution 2 2 1 1 Safe paralleling TO-3P TO-247 Low

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STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A 2 1 Tight parameters distribution TAB TO-3PF Safe paralleling Low thermal resistance 3 3 Applicati