Справочник IGBT. STGWT80H65DFB

 

STGWT80H65DFB - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGWT80H65DFB
   Тип транзистора: IGBT + Diode
   Маркировка: GWT80H65DFB
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 469 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 52 nS
   Coesⓘ - Выходная емкость, типовая: 385 pF
   Qgⓘ - Общий заряд затвора, typ: 414 nC
   Тип корпуса: TO3P

 Аналог (замена) для STGWT80H65DFB

 

 

STGWT80H65DFB Datasheet (PDF)

 ..1. Size:663K  st
 stgw80h65dfb stgwt80h65dfb.pdf

STGWT80H65DFB STGWT80H65DFB

STGW80H65DFB, STGWT80H65DFBDatasheetTrench gate field-stop 650 V, 80 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current323 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A121 Tight parameter distributionTO-247TO-3P Safe paralleling Positive VCE(s

 ..2. Size:1459K  st
 stgwt80h65dfb.pdf

STGWT80H65DFB STGWT80H65DFB

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB STGWT80H65DFBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current32211 VCE(sat) = 1.6 V (typ.) @ IC = 80 AMax247 TO-247 Tight parameter distributionTAB Safe par

 4.1. Size:1471K  st
 stgwt80h65fb.pdf

STGWT80H65DFB STGWT80H65DFB

STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low

 7.1. Size:1643K  st
 stgwt80v60f.pdf

STGWT80H65DFB STGWT80H65DFB

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 7.2. Size:1592K  st
 stgwt80v60df.pdf

STGWT80H65DFB STGWT80H65DFB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 7.3. Size:1562K  st
 stgw80v60df stgwt80v60df.pdf

STGWT80H65DFB STGWT80H65DFB

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

Другие IGBT... STGWA40M120DF3 , STGWA40S120DF3 , STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , IRG4PC50U , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C .

 

 
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