All IGBT. STGWT80V60DF Datasheet

 

STGWT80V60DF Datasheet and Replacement


   Type Designator: STGWT80V60DF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GWT80V60DF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 469 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Qgⓘ - Total Gate Charge, typ: 448 nC
   Package: TO3P
      - IGBT Cross-Reference

 

STGWT80V60DF Datasheet (PDF)

 ..1. Size:1592K  st
 stgwt80v60df.pdf pdf_icon

STGWT80V60DF

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 ..2. Size:1562K  st
 stgw80v60df stgwt80v60df.pdf pdf_icon

STGWT80V60DF

STGW80V60DF STGWT80V60DFTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution3 Safe paralleling3221 Low thermal resistance1 Very fast soft recovery antipa

 4.1. Size:1643K  st
 stgwt80v60f.pdf pdf_icon

STGWT80V60DF

STGFW80V60F, STGW80V60F, STGWT80V60FTrench gate field-stop IGBT, V series 600 V, 80 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 80 A21 Tight parameters distributionTABTO-3PF Safe paralleling Low thermal resistance33Applicati

 7.1. Size:1471K  st
 stgwt80h65fb.pdf pdf_icon

STGWT80V60DF

STGW80H65FB, STGWA80H65FB, STGWT80H65FBTrench gate field-stop IGBT, HB series 650 V, 80 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB High speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 80 A3 3 Tight parameter distribution2211 Safe parallelingTO-3PTO-247 Low

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Datasheet: STGW80H65DFB , STGW80H65FB , STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , FGH75T65UPD , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U .

History: DIM1200FSM12-A | STGWA40H120DF2 | IGC114T170S8RH | DIM2400ESM17-A | IGC10T65QE | IGC18T120T8L | DIM1000ECM33-TS

Keywords - STGWT80V60DF transistor datasheet

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