70MT060WSP IGBT. Datasheet pdf. Equivalent
Type Designator: 70MT060WSP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 378 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 66 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.93 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 530 pF
Qgⓘ - Total Gate Charge, typ: 320 nC
Package: MODULE
70MT060WSP Transistor Equivalent Substitute - IGBT Cross-Reference Search
70MT060WSP Datasheet (PDF)
70mt060wsp.pdf
70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplatePRODUCT SUMMARY UL appr
vs-70mt060wsp.pdf
VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria
70mt060w.pdf
70MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed 60 kHz to 150 k
vs-70mt060whtapbf.pdf
VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789
70mt060whtapbf.pdf
70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed
Datasheet: STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , IRGP4062D , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN .
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