Справочник IGBT. 70MT060WSP

 

70MT060WSP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: 70MT060WSP
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 378 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 66 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.93 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 35 nS
   Coesⓘ - Выходная емкость, типовая: 530 pF
   Qgⓘ - Общий заряд затвора, typ: 320 nC
   Тип корпуса: MODULE

 Аналог (замена) для 70MT060WSP

 

 

70MT060WSP Datasheet (PDF)

 ..1. Size:2777K  vishay
 70mt060wsp.pdf

70MT060WSP 70MT060WSP

70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplatePRODUCT SUMMARY UL appr

 0.1. Size:198K  vishay
 vs-70mt060wsp.pdf

70MT060WSP 70MT060WSP

VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria

 6.1. Size:151K  vishay
 70mt060w.pdf

70MT060WSP 70MT060WSP

70MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed 60 kHz to 150 k

 6.2. Size:178K  vishay
 vs-70mt060whtapbf.pdf

70MT060WSP 70MT060WSP

VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789

 6.3. Size:147K  vishay
 70mt060whtapbf.pdf

70MT060WSP 70MT060WSP

70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed

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