70MT060WSP Даташит. Аналоги. Параметры и характеристики.
Наименование: 70MT060WSP
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 378 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 66 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.93 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 35 nS
Coesⓘ - Выходная емкость, типовая: 530 pF
Тип корпуса: MODULE
- подбор IGBT транзистора по параметрам
70MT060WSP Datasheet (PDF)
70mt060wsp.pdf

70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplatePRODUCT SUMMARY UL appr
vs-70mt060wsp.pdf

VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria
70mt060w.pdf

70MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed 60 kHz to 150 k
vs-70mt060whtapbf.pdf

VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789
Другие IGBT... STGW80V60DF , STGW80V60F , STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , MBQ50T65FESC , RJH65S04DPQ-A0 , 1MBI75U4F-120L-50 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN .
History: SKM50GH063DL | MMG200DR120B | APT47GA60JD40 | IRGP4068DPBF | SKM200GAL173D | 6SI75N12 | SKM300GAR123D
History: SKM50GH063DL | MMG200DR120B | APT47GA60JD40 | IRGP4068DPBF | SKM200GAL173D | 6SI75N12 | SKM300GAR123D



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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