HGTG20N60B3D Datasheet. Specs and Replacement

Type Designator: HGTG20N60B3D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 165 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Package: TO247

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HGTG20N60B3D datasheet

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HGTG20N60B3D

S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package 40A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oC E C Short Circuit Rated G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG20N60B3D is a MOS gated high voltage switching... See More ⇒

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HGTG20N60B3D

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs Short Circuit Rated and bipolar transistors. The device has... See More ⇒

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HGTG20N60B3D

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oC HGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capability switching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .... See More ⇒

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HGTG20N60B3D

HGTP20N60B3, S E M I C O N D U C T O R HGTG20N60B3 February 1996 40A, 600V, UFS Series N-Channel IGBT JEDEC TO-220AB Features Package EMITTER COLLECTOR 40A, 600V at TC = +25oC GATE Square Switching SOA Capability COLLECTOR (FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction Loss JEDEC STYLE TO-247 Description EMITTER The HGTP20N6... See More ⇒

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Specs: HGTG18N120BN, HGTG18N120BND, HGTG20N120CN, HGTG20N120CND, HGTG20N120E2, HGTG20N60A4, HGTG20N60A4D, HGTG20N60B3, NGTB75N65FL2, HGTG20N60C3, HGTG20N60C3D, HGTG20N60C3DR, HGTG20N60C3R, HGTG27N120BN, HGTG27N60C3DR, HGTG27N60C3R, HGTG30N120CN

Keywords - HGTG20N60B3D transistor spec

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