All IGBT. HGTG20N60B3D Datasheet

 

HGTG20N60B3D IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTG20N60B3D
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G20N60B3D
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 165
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 20
   Total Gate Charge (Qg), typ, nC: 80
   Package: TO247

 HGTG20N60B3D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG20N60B3D Datasheet (PDF)

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 hgtg20n60b3d.pdf

HGTG20N60B3D HGTG20N60B3D

S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching

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 hgtg20n60b3d.pdf

HGTG20N60B3D HGTG20N60B3D

HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has

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HGTG20N60B3D HGTG20N60B3D

HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .

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HGTG20N60B3D HGTG20N60B3D

HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6

 3.3. Size:194K  fairchild semi
 hgtg20n60b3.pdf

HGTG20N60B3D HGTG20N60B3D

HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh

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 hgtg20n60b3.pdf

HGTG20N60B3D HGTG20N60B3D

Datasheet: HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , GT30F126 , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN .

 

 
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