HGTG20N60B3D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: HGTG20N60B3D
Тип транзистора: IGBT + Diode
Маркировка: G20N60B3D
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 165 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 20 nS
Qgⓘ - Общий заряд затвора, typ: 80 nC
Тип корпуса: TO247
Аналог (замена) для HGTG20N60B3D
HGTG20N60B3D Datasheet (PDF)
hgtg20n60b3d.pdf
S E M I C O N D U C T O R HGTG20N60B3D40A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1996Features Package 40A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oCEC Short Circuit RatedG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG20N60B3D is a MOS gated high voltage switching
hgtg20n60b3d.pdf
HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has
hgt1s20n60b3s hgtp20n60b3 hgtg20n60b3.pdf
HGT1S20N60B3S, HGTP20N60B3,HGTG20N60B3Data Sheet December 200140A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGT1S20N60B3S, the HGTP20N60B3 and the 40A, 600V at TC = 25oCHGTG20N60B3 are Generation III MOS gated high voltage 600V Switching SOA Capabilityswitching devices combining the best features of MOSFETs Typical Fall Time. . . . . . . . . . . . . . . . . . .
hgtp20n60b3 hgtg20n60b3.pdf
HGTP20N60B3,S E M I C O N D U C T O RHGTG20N60B3February 1996 40A, 600V, UFS Series N-Channel IGBTJEDEC TO-220ABFeatures PackageEMITTER COLLECTOR 40A, 600V at TC = +25oCGATE Square Switching SOA CapabilityCOLLECTOR(FLANGE) Typical Fall Time - 140ns at +150oC Short Circuit Rated Low Conduction LossJEDEC STYLE TO-247DescriptionEMITTERThe HGTP20N6
hgtg20n60b3.pdf
HGTG20N60B3Data Sheet October 200440A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTG20N60B3 is a Generation III MOS gated high 40A, 600V at TC = 25oCvoltage switching devices combining the best features of 600V Switching SOA CapabilityMOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCh
Другие IGBT... HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , YGW40N65F1A1 , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2