All IGBT. NGTB75N60FL2WG Datasheet

 

NGTB75N60FL2WG Datasheet and Replacement


   Type Designator: NGTB75N60FL2WG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 265 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTB75N60FL2WG Datasheet (PDF)

 ..1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 2.1. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 5.1. Size:88K  onsemi
 ngtb75n60s.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

 5.2. Size:88K  onsemi
 ngtb75n60swg.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

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Datasheet: MMG50SR120UK , MMG50SR120UZA , MMG50SR120UZK , MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , GT30F126 , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ .

History: APT40GP60BG | IXGT20N120B

Keywords - NGTB75N60FL2WG transistor datasheet

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