NGTB75N60FL2WG - аналоги и описание IGBT

 

NGTB75N60FL2WG - аналоги, основные параметры, даташиты

Наименование: NGTB75N60FL2WG

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 265 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃

tr ⓘ - Время нарастания типовое: 48 nS

Coesⓘ - Выходная емкость, типовая: 300 pF

Тип корпуса: TO247

 Аналог (замена) для NGTB75N60FL2WG

- подбор ⓘ IGBT транзистора по параметрам

 

NGTB75N60FL2WG даташит

 ..1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V

 2.1. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V

 5.1. Size:88K  onsemi
 ngtb75n60s.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c

 5.2. Size:88K  onsemi
 ngtb75n60swg.pdf pdf_icon

NGTB75N60FL2WG

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... MMG50SR120UK , MMG50SR120UZA , MMG50SR120UZK , MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , FGA60N65SMD , NGTB75N60S , NGTB75N60SWG , NGTB75N65FL2 , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ .

 

 

 


 
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