NGTB75N65FL2 Datasheet. Specs and Replacement

Type Designator: NGTB75N65FL2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 265 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 48 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: TO247

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NGTB75N65FL2 datasheet

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NGTB75N65FL2

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V ... See More ⇒

 0.1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N65FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 650 V ... See More ⇒

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V ... See More ⇒

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175 C 75 A, 600 V ... See More ⇒

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Specs: MMG75J120U6HN, MMG75S120B6HN, NGTB50N60L2, NGTB50N60L2WG, NGTB75N60FL2, NGTB75N60FL2WG, NGTB75N60S, NGTB75N60SWG, CRG60T60AK3HD, NGTB75N65FL2WG, MMG200HB060B6EN, MMG200HB060H6EN, MMG100D170B6EN, MMG100J120UZ, MMG100SR120B, MMG100SR120DE, MMG100SR120UA

Keywords - NGTB75N65FL2 transistor spec

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