All IGBT. NGTB75N65FL2 Datasheet

 

NGTB75N65FL2 IGBT. Datasheet pdf. Equivalent


   Type Designator: NGTB75N65FL2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 75N65FL2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 265 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247

 NGTB75N65FL2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGTB75N65FL2 Datasheet (PDF)

 ..1. Size:243K  onsemi
 ngtb75n65fl2.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 0.1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.3. Size:88K  onsemi
 ngtb75n60s.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

 6.4. Size:88K  onsemi
 ngtb75n60swg.pdf

NGTB75N65FL2 NGTB75N65FL2

NGTB75N60SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fastwww.onsemi.comc

Datasheet: MMG75J120U6HN , MMG75S120B6HN , NGTB50N60L2 , NGTB50N60L2WG , NGTB75N60FL2 , NGTB75N60FL2WG , NGTB75N60S , NGTB75N60SWG , RJH30E2DPP , NGTB75N65FL2WG , MMG200HB060B6EN , MMG200HB060H6EN , MMG100D170B6EN , MMG100J120UZ , MMG100SR120B , MMG100SR120DE , MMG100SR120UA .

 

 
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