All IGBT. NGTB75N65FL2 Datasheet

 

NGTB75N65FL2 Datasheet and Replacement


   Type Designator: NGTB75N65FL2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 75N65FL2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 265 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 48 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 310 nC
   Package: TO247
 

 NGTB75N65FL2 substitution

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NGTB75N65FL2 Datasheet (PDF)

 ..1. Size:243K  onsemi
 ngtb75n65fl2.pdf pdf_icon

NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 0.1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - NGTB75N65FL2 transistor datasheet

 NGTB75N65FL2 cross reference
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