Справочник IGBT. NGTB75N65FL2

 

NGTB75N65FL2 Даташит. Аналоги. Параметры и характеристики.


   Наименование: NGTB75N65FL2
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 265 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 48 nS
   Coesⓘ - Выходная емкость, типовая: 300 pF
   Тип корпуса: TO247
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NGTB75N65FL2 Datasheet (PDF)

 ..1. Size:243K  onsemi
 ngtb75n65fl2.pdf pdf_icon

NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 0.1. Size:239K  onsemi
 ngtb75n65fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N65FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 650 V

 6.1. Size:243K  onsemi
 ngtb75n60fl2wg.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

 6.2. Size:243K  onsemi
 ngtb75n60fl2.pdf pdf_icon

NGTB75N65FL2

NGTB75N60FL2WGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.Featureswww.onsemi.com Extremely Efficient Trench with Field Stop Technology TJmax = 175C75 A, 600 V

ПОКАЗАТЬ ЕЩЁ

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History: IXA40RG1200DHGLB | SKM50GB12V | FD800R33KF2C | 40MT120UHAPBF | BSM100GAL120DN2 | APT25GP90BDF1 | IRGIB15B60KD1P

 

 
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