All IGBT. HGTG20N60C3R Datasheet

 

HGTG20N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG20N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 164

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 34

Package: TO247

HGTG20N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG20N60C3R Datasheet (PDF)

0.1. hgtg20n60c3r.pdf Size:112K _harris_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

3.1. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . .

 5.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has

5.2. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a

 5.3. hgtg20n60b3.pdf Size:194K _fairchild_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h

5.4. hgtg20n60a4d.pdf Size:148K _fairchild_semi

HGTG20N60C3R
HGTG20N60C3R

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance o

Datasheet: HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , IRGP50B60PD1 , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D .

 

 
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