All IGBT. HGTG27N60C3DR Datasheet

 

HGTG27N60C3DR IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTG27N60C3DR
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 27N60C3DR
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 54 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Qgⓘ - Total Gate Charge, typ: 156 nC
   Package: TO247

 HGTG27N60C3DR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG27N60C3DR Datasheet (PDF)

 ..1. Size:85K  1
 hgtg27n60c3dr.pdf

HGTG27N60C3DR HGTG27N60C3DR

HGTG27N60C3DRTMData Sheet June 2000 File Number 4262.154A, 600V, Rugged UFS Series N-Channel FeaturesIGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC[ /TitleThis IGBT was designed for optimum performance in the 600V Switching SOA Capability(HGTdemanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

 3.1. Size:190K  1
 hgtg27n60c3r.pdf

HGTG27N60C3DR HGTG27N60C3DR

 7.1. Size:164K  fairchild semi
 hgtg27n120bn hgt5a27n120bn.pdf

HGTG27N60C3DR HGTG27N60C3DR

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

 7.2. Size:378K  onsemi
 hgtg27n120bn.pdf

HGTG27N60C3DR HGTG27N60C3DR

NPT Series N-Channel IGBT72 A, 1200 VHGTG27N120BNThe HGTG27N120BN is Non-Punch Through (NPT) IGBT design.This is a new member of the MOS gated high voltage switching IGBTfamily. IGBTs combine the best features of MOSFETs and bipolarwww.onsemi.comtransistors. This device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor.CThe

Datasheet: HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , IRGP4062D , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D .

 

 
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