HGTG27N60C3DRTMData Sheet June 2000 File Number 4262.154A, 600V, Rugged UFS Series N-Channel FeaturesIGBT with Anti-Parallel Ultrafast Diode 54A, 600V, TC = 25oC[ /TitleThis IGBT was designed for optimum performance in the 600V Switching SOA Capability(HGTdemanding world of motor control operation as well as other Typical Fall Time at TJ = 150oC . . . . . . . . .

HGTG27N120BN / HGT5A27N120BNData Sheet October 200472A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG27N120BN and HGT5A27N120BN are Non- 72A, 1200V, TC = 25oCPunch Through (NPT) IGBT design. This is a new member 1200V Switching SOA Capabilityof the MOS gated high voltage switching IGBT family. IGBTs Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 15

NPT Series N-Channel IGBT72 A, 1200 VHGTG27N120BNThe HGTG27N120BN is Non-Punch Through (NPT) IGBT design.This is a new member of the MOS gated high voltage switching IGBTfamily. IGBTs combine the best features of MOSFETs and bipolarwww.onsemi.comtransistors. This device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor.CThe