All IGBT. HGTG30N120CN Datasheet

 

HGTG30N120CN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG30N120CN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 75

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG30N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG30N120CN Datasheet (PDF)

6.1. hgtg30n1.pdf Size:52K _harris_semi

HGTG30N120CN
HGTG30N120CN

S E M I C O N D U C T O R HGTG30N120D230A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 30A, 1200V Latch Free Operation EMITTERCOLLECTOR Typical Fall Time - 580nsGATE High Input ImpedanceCOLLECTOR(BOTTOM SIDE Low Conduction LossMETAL)DescriptionThe HGTG30N120D2 is a MOS gated high voltage switchingdevice combining the best fea

7.1. hgtg30n60a4d.pdf Size:173K _fairchild_semi

HGTG30N120CN
HGTG30N120CN

HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan

7.2. hgtg30n60b3.pdf Size:204K _fairchild_semi

HGTG30N120CN
HGTG30N120CN

HGTG30N60B3Data Sheet November 200460A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC

 7.3. hgtg30n60c3d.pdf Size:268K _fairchild_semi

HGTG30N120CN
HGTG30N120CN

HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors

7.4. hgtg30n60a4.pdf Size:161K _fairchild_semi

HGTG30N120CN
HGTG30N120CN

HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state co

 7.5. hgtg30n60b3d.pdf Size:212K _fairchild_semi

HGTG30N120CN
HGTG30N120CN

HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

7.6. hgtg30n6.pdf Size:127K _harris_semi

HGTG30N120CN
HGTG30N120CN

S E M I C O N D U C T O R HGTG30N60C3D63A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 63A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 230ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG30N60C3D is a MOS gated high voltage swit

Datasheet: HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR , HGTG20N60C3R , HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , G3N60C3D , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 .

 

 
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