HGTG30N120CN
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: HGTG30N120CN
Тип транзистора: IGBT
Маркировка: G30N120CN
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 500
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 1200
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
75
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.1
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 6.6(typ)
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 21
nS
Qgⓘ - Общий заряд затвора, typ: 260
nC
Тип корпуса:
TO247
Аналог (замена) для HGTG30N120CN
HGTG30N120CN
Datasheet (PDF)
..1. Size:81K 1
hgtg30n120cn.pdf 
HGTG30N120CNData Sheet January 2000 File Number 4483.375A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG30N120CN is a Non-Punch Through (NPT) IGBT 75A, 1200V, TC = 25oCdesign. This is a new member of the MOS gated high 1200V Switching SOA Capabilityvoltage switching IGBT family. IGBTs combine the best Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 15
6.1. Size:52K harris semi
hgtg30n1.pdf 
S E M I C O N D U C T O R HGTG30N120D230A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 30A, 1200V Latch Free Operation EMITTERCOLLECTOR Typical Fall Time - 580nsGATE High Input ImpedanceCOLLECTOR(BOTTOM SIDE Low Conduction LossMETAL)DescriptionThe HGTG30N120D2 is a MOS gated high voltage switchingdevice combining the best fea
7.2. Size:212K fairchild semi
hgtg30n60b3d.pdf 
HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor
7.3. Size:204K fairchild semi
hgtg30n60b3.pdf 
HGTG30N60B3Data Sheet November 200460A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
7.4. Size:173K fairchild semi
hgtg30n60a4d.pdf 
HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan
7.5. Size:161K fairchild semi
hgtg30n60a4.pdf 
HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state co
7.6. Size:268K fairchild semi
hgtg30n60c3d.pdf 
HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors
7.7. Size:422K onsemi
hgtg30n60b3d.pdf 
UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode60 A, 600 VHGTG30N60B3Dwww.onsemi.comThe HGTG30N60B3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. This device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varie
7.8. Size:453K onsemi
hgtg30n60b3.pdf 
IGBT - NPT600 VHGTG30N60B3DescriptionThe HGTG30N60B3 combines the best features of high inputimpedance of a MOSFET and the low on-state conduction losswww.onsemi.comof a bipolar transistor. The IGBT is ideal for many high voltageswitching applications operating at moderate frequencies where lowVCES ICconduction losses are essential, such as: UPS, solar inverter and power12
7.9. Size:187K onsemi
hgtg30n60a4d.pdf 
HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan
7.10. Size:420K onsemi
hgtg30n60c3d.pdf 
UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiodes63 A, 600 VHGTG30N60C3Dwww.onsemi.comThe HGTG30N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varie
7.11. Size:127K harris semi
hgtg30n6.pdf 
S E M I C O N D U C T O R HGTG30N60C3D63A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 63A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 230ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG30N60C3D is a MOS gated high voltage swit
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