HGTG30N60C3 IGBT. Datasheet pdf. Equivalent
Type Designator: HGTG30N60C3
Type: IGBT
Marking Code: G30N60C3
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 208
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 63
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 45
Total Gate Charge (Qg), typ, nC: 162
Package: TO247
HGTG30N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTG30N60C3 Datasheet (PDF)
hgtg30n60c3d.pdf
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HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors
hgtg30n60c3d.pdf
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UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiodes63 A, 600 VHGTG30N60C3Dwww.onsemi.comThe HGTG30N60C3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. The device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varie
hgtg30n60b3d.pdf
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HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor
hgtg30n60b3.pdf
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HGTG30N60B3Data Sheet November 200460A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
hgtg30n60a4d.pdf
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HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan
hgtg30n60a4.pdf
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HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state co
hgtg30n60b3d.pdf
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UFS Series N-Channel IGBTwith Anti-Parallel HyperfastDiode60 A, 600 VHGTG30N60B3Dwww.onsemi.comThe HGTG30N60B3D is a MOS gated high voltage switchingdevice combining the best features of MOSFETs and bipolarCtransistors. This device has the high input impedance of a MOSFETand the low on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varie
hgtg30n60b3.pdf
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IGBT - NPT600 VHGTG30N60B3DescriptionThe HGTG30N60B3 combines the best features of high inputimpedance of a MOSFET and the low on-state conduction losswww.onsemi.comof a bipolar transistor. The IGBT is ideal for many high voltageswitching applications operating at moderate frequencies where lowVCES ICconduction losses are essential, such as: UPS, solar inverter and power12
hgtg30n60a4d.pdf
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HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan
Datasheet: HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , CRG60T60AK3HD , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND .
![HGTG30N60C3](https://alltransistors.com/images/us.png)
![HGTG30N60C3](https://alltransistors.com/images/es.png)
![HGTG30N60C3](https://alltransistors.com/images/ru.png)
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