Справочник IGBT. HGTG30N60C3

 

HGTG30N60C3 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTG30N60C3

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 208

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 63

Максимальная температура перехода (Tj): 150

Время нарастания: 40

Тип корпуса: TO247

Аналог (замена) для HGTG30N60C3

 

 

HGTG30N60C3 Datasheet (PDF)

0.1. hgtg30n60c3d.pdf Size:268K _fairchild_semi

HGTG30N60C3
HGTG30N60C3

HGTG30N60C3DData Sheet January 2009 File Number 4041.263A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 63A, 600V at TC = 25oCThe HGTG30N60C3D is a MOS gated high voltage Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oCswitching device combining the best features of MOSFETs Short Circuit Ratingand bipolar transistors

5.1. hgtg30n60a4d.pdf Size:173K _fairchild_semi

HGTG30N60C3
HGTG30N60C3

HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedan

5.2. hgtg30n60b3.pdf Size:204K _fairchild_semi

HGTG30N60C3
HGTG30N60C3

HGTG30N60B3Data Sheet November 200460A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG30N60B3 is a MOS gated high voltage switching 60A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC

 5.3. hgtg30n60a4.pdf Size:161K _fairchild_semi

HGTG30N60C3
HGTG30N60C3

HGTG30N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGTG30N60A4 is a MOS gated high voltage switching >100kHz Operation at 390V, 30Adevice combining the best features of MOSFETs and bipolar 200kHz Operation at 390V, 18Atransistors. This device has the high input impedance of a 600V Switching SOA CapabilityMOSFET and the low on-state co

5.4. hgtg30n60b3d.pdf Size:212K _fairchild_semi

HGTG30N60C3
HGTG30N60C3

HGTG30N60B3DData Sheet April 200460A, 600V, UFS Series N-Channel IGBT Packagingwith Anti-Parallel Hyperfast DiodeJEDEC STYLE TO-247EThe HGTG30N60B3D is a MOS gated high voltage switching Cdevice combining the best features of MOSFETs and bipolar Gtransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

Другие IGBT... HGTG27N120BN , HGTG27N60C3DR , HGTG27N60C3R , HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , RJP63F3DPP-M0 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND .

 

 
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