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HGTG40N60A4 PDF Specs and Replacement


   Type Designator: HGTG40N60A4
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 18 nS
   Package: TO247
 

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HGTG40N60A4 PDF specs

 ..1. Size:160K  fairchild semi
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HGTG40N60A4

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on... See More ⇒

 5.1. Size:84K  1
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HGTG40N60A4

HGTG40N60C3 Data Sheet January 2000 File Number 4472.2 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1... See More ⇒

 5.2. Size:108K  1
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HGTG40N60A4

HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC impedance... See More ⇒

 5.3. Size:138K  fairchild semi
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HGTG40N60A4

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at ... See More ⇒

Specs: HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , XNF15N60T , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 .

Keywords - HGTG40N60A4 transistor spec

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