Справочник IGBT. HGTG40N60A4


HGTG40N60A4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTG40N60A4

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Максимальная температура перехода (Tj): 150

Тип корпуса: TO247

Аналог (замена) для HGTG40N60A4



HGTG40N60A4 Datasheet (PDF)

0.1. hgtg40n60a4.pdf Size:160K _fairchild_semi


HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on

5.1. hgtg40n60b3.pdf Size:138K _fairchild_semi


HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

5.2. hgtg40n60b3.pdf Size:65K _harris_semi


S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes

Другие IGBT... HGTG30N120CN , HGTG30N60A4 , HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , GT60M101 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 .


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