Справочник IGBT. HGTG5N120BND

 

HGTG5N120BND - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTG5N120BND

Тип транзистора: IGBT + Diode

Маркировка: 5N120BND

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc), W: 167

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 21

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.45

Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.8(typ)

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 15

Общий заряд затвора (Qg), typ, nC: 53

Тип корпуса: TO247

Аналог (замена) для HGTG5N120BND

 

 

HGTG5N120BND Datasheet (PDF)

 ..1. Size:89K  1
 hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 ..2. Size:195K  fairchild semi
 hgtg5n120bnd hgtp5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v

 ..3. Size:293K  onsemi
 hgtg5n120bnd hgtp5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:28K  intersil
 hgtg5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 5.1. Size:87K  1
 hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde

Другие IGBT... HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , TGAN40N60FD , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 .

 

 
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