HGTG5N120BND - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: HGTG5N120BND
Тип управляющего канала: N-Channel
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200
Максимальный постоянный ток коллектора (Ic): 21
Максимальная температура перехода (Tj): 150
Тип корпуса: TO247
Аналог (замена) для HGTG5N120BND
HGTG5N120BND Datasheet (PDF)
..1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi
HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v
..2. hgtg5n120bnd.pdf Size:28K _intersil
HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC
Другие IGBT... HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , IRG4PSC71UD , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 .



Список транзисторов
Обновления
IGBT: DGW75N65CTL1 | DGW60N65BTH | DGW50N65CTL1 | DGW50N65CTH | DGW50N65BTH | DGW40N65CTL | DGW40N65CTH | DGW40N65BTH | DGW40N120CTL | DGW40N120CTH0 | DGW40N120CTH