HGTG5N120BND - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: HGTG5N120BND

Тип управляющего канала: N-Channel

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 1200

Максимальный постоянный ток коллектора (Ic): 21

Максимальная температура перехода (Tj): 150

Тип корпуса: TO247

Аналог (замена) для HGTG5N120BND

HGTG5N120BND Datasheet (PDF)

..1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v

..2. hgtg5n120bnd.pdf Size:28K _intersil

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

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