HGTG5N120BND IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG5N120BND

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 21

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG5N120BND Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG5N120BND IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG5N120BND

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 21

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG5N120BND Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG5N120BND Datasheet (PDF)

0.1. hgtg5n120bnd hgtp5n120bnd.pdf Size:195K _fairchild_semi

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v

0.2. hgtg5n120bnd.pdf Size:28K _intersil

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

Datasheet: HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , IRG4PH50U , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 .

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IGBT: FGL40N120AND | FGA40N65SMD | MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170