All IGBT. HGTG5N120BND Datasheet

 

HGTG5N120BND IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTG5N120BND
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 5N120BND
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 167
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 21
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8(typ)
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Total Gate Charge (Qg), typ, nC: 53
   Package: TO247

 HGTG5N120BND Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG5N120BND Datasheet (PDF)

 ..1. Size:89K  1
hgtg5n120bnd hgtp5n120bnd hgt1s5n120bnds.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 ..2. Size:195K  fairchild semi
hgtg5n120bnd hgtp5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BNDData Sheet May 200321A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BND and HGTP5N120BND are Non- 1200V Switching SOA CapabilityPunch Through (NPT) IGBT designs. They are new Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150oCmembers of the MOS gated high v

 ..3. Size:293K  onsemi
hgtg5n120bnd hgtp5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:28K  intersil
hgtg5n120bnd.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120BND, HGTP5N120BND,HGT1S5N120BNDSData Sheet January 2000 File Number 4597.221A, 1200V, NPT Series N-Channel IGBTs Featureswith Anti-Parallel Hyperfast Diodes 21A, 1200V, TC = 25oCThe HGTG5N120BN, HGTP5N120BND, and 1200V Switching SOA CapabilityHGT1S5N120BNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150oC

 5.1. Size:87K  1
hgtg5n120cnd hgtp5n120cnd hgt1s5n120cnds.pdf

HGTG5N120BND HGTG5N120BND

HGTG5N120CND, HGTP5N120CND,HGT1S5N120CNDSData Sheet January 2000 File Number 4598.225A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 25A, 1200V, TC = 25oCThe HGTG5N120CND, HGTP5N120CND and 1200V Switching SOA CapabilityHGT1S5N120CNDS are Non-Punch Through (NPT) IGBT Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oCde

Datasheet: HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , IXRP15N120 , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 .

 

 
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