Справочник IGBT. HGTG40N60C3R

 

HGTG40N60C3R - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: HGTG40N60C3R
   Тип транзистора: IGBT
   Маркировка: G40N60C3
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 291 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.3 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Qgⓘ - Общий заряд затвора, typ: 275 nC
   Тип корпуса: TO247

 Аналог (замена) для HGTG40N60C3R

 

 

HGTG40N60C3R Datasheet (PDF)

 ..1. Size:84K  1
 hgtg40n60c3r.pdf

HGTG40N60C3R HGTG40N60C3R

HGTG40N60C3Data Sheet January 2000 File Number 4472.275A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1

 3.1. Size:108K  1
 hgtg40n60c3.pdf

HGTG40N60C3R HGTG40N60C3R

HGTG40N60C3Data Sheet December 200175A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oCimpedance

 5.1. Size:160K  fairchild semi
 hgtg40n60a4.pdf

HGTG40N60C3R HGTG40N60C3R

HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on

 5.2. Size:138K  fairchild semi
 hgtg40n60b3.pdf

HGTG40N60C3R HGTG40N60C3R

HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

 5.3. Size:65K  harris semi
 hgtg40n60b3.pdf

HGTG40N60C3R HGTG40N60C3R

S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes

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