HGTG40N60C3R - аналоги и описание IGBT

HGTG40N60C3 Data Sheet January 2000 File Number 4472.2 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1

HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC impedance

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 70A, 600V at TC = +25oC E Square Switching SOA Capability C G Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the bes