HGTG40N60C3R - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTG40N60C3R
Tipo de transistor: IGBT
Código de marcado: G40N60C3
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 291 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Qgⓘ - Carga total de la puerta, typ: 275 nC
Paquete / Cubierta: TO247
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HGTG40N60C3R Datasheet (PDF)
hgtg40n60c3r.pdf
HGTG40N60C3Data Sheet January 2000 File Number 4472.275A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1
hgtg40n60c3.pdf
HGTG40N60C3Data Sheet December 200175A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oCimpedance
hgtg40n60a4.pdf
HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on
hgtg40n60b3.pdf
HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at
hgtg40n60b3.pdf
S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes
Otros transistores... HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , IHW20N120R2 , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D .
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