HGTG40N60C3R Datasheet. Specs and Replacement
Type Designator: HGTG40N60C3R 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 291 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Package: TO247
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HGTG40N60C3R datasheet
hgtg40n60c3r.pdf
HGTG40N60C3 Data Sheet January 2000 File Number 4472.2 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1... See More ⇒
hgtg40n60c3.pdf
HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oC device combining the best features of a MOSFET and a 600V Switching SOA Capability bipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC impedance... See More ⇒
hgtg40n60a4.pdf
HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance 600V Switching SOA Capability of a MOSFET and the low on... See More ⇒
hgtg40n60b3.pdf
HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar 600V Switching SOA Capability transistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at ... See More ⇒
Specs: HGTG30N60B3, HGTG30N60B3D, HGTG30N60C3, HGTG30N60C3D, HGTG34N100E2, HGTG40N60A4, HGTG40N60B3, HGTG40N60C3, IHW20N135R3, HGTG5N120BND, HGTG5N120CND, HGTG7N60A4, HGTG7N60A4D, HGTH12N40C1, HGTH12N40C1D, HGTH12N40E1, HGTH12N40E1D
Keywords - HGTG40N60C3R transistor spec
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History: FGP20N60UFD
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