All IGBT. HGTG40N60C3R Datasheet

 

HGTG40N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG40N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 291

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 75

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 56

Package: TO247

HGTG40N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG40N60C3R IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG40N60C3R

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 291

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 75

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 56

Package: TO247

HGTG40N60C3R Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG40N60C3R Datasheet (PDF)

5.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

HGTG40N60C3R
HGTG40N60C3R

HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on

5.2. hgtg40n60b3.pdf Size:138K _fairchild_semi

HGTG40N60C3R
HGTG40N60C3R

HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

 5.3. hgtg40n60b3.pdf Size:65K _harris_semi

HGTG40N60C3R
HGTG40N60C3R

S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes

Datasheet: HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , IRG4PC50F , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D .

 

 
Back to Top