NSGM150GB120B IGBT. Datasheet pdf. Equivalent
Type Designator: NSGM150GB120B
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1200 pF
Package: MODULE
NSGM150GB120B Transistor Equivalent Substitute - IGBT Cross-Reference Search
NSGM150GB120B Datasheet (PDF)
nsgm150gb120b.pdf
SEMICONDUCTOR48.525 25C2E1 E2 C13-M693+0.3 4- 6.5108+0.514 14 14 2.84-0.5All dimensions in millimeters271517.848+0.362.5+0.5G1 E1E2 G230.930.522.5SEMICONDUCTORRoHS RoHS SEMICONDUCTORSEMICONDUCTORSEMICONDUCTORSEMICONDUCTOR
nsgm100gb120.pdf
RoHS NSGM100GB Series RoHS SEMICONDUCTORIGBT Module (2 in one-package), 100A Features1. High frequency operation2. Low losses and soft switching3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode5. Small temperature dependence of the turn-off switching loss40+0.5 3-M5.0 Typical Applications23+0.5 23+0.5AC Motor ControlDC Motor
Datasheet: APT75GN120LG , IKQ120N60TA , KM435A , MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , SGP30N60 , NSGM200GB120B , KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN .
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