NSGM150GB120B Specs and Replacement
Type Designator: NSGM150GB120B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 1200 pF
Package: MODULE NSGM150GB120B Substitution - IGBT ⓘ Cross-Reference Search
NSGM150GB120B datasheet
nsgm150gb120b.pdf
SEMICONDUCTOR 48.5 25 25 C2E1 E2 C1 3-M6 93+0.3 4- 6.5 108+0.5 14 14 14 2.8 4-0.5 All dimensions in millimeters 27 15 17.8 48+0.3 62.5+0.5 G1 E1 E2 G2 30.9 30.5 22.5 SEMICONDUCTOR RoHS RoHS SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR ... See More ⇒
nsgm100gb120.pdf
RoHS NSGM100GB Series RoHS SEMICONDUCTOR IGBT Module (2 in one-package), 100A Features 1. High frequency operation 2. Low losses and soft switching 3. Isolated baseplate for easy heat sinking 4. Discrete super-fast recovery free-wheel diode 5. Small temperature dependence of the turn-off switching loss 40+0.5 3-M5.0 Typical Applications 23+0.5 23+0.5 AC Motor Control DC Motor... See More ⇒
Specs: APT75GN120LG , IKQ120N60TA , KM435A , MMG100DR120B , MMG300Q060B6R , SKM200GAH123DKL , FF150R17ME3G , FF200R12KE3 , FGH75T65UPD , NSGM200GB120B , KM435B , T0360NB25A , MMG300DR120B , KM435V , NSGM300GB120B , MMG400D120B6HN , MMG450WB170B6EN .
Keywords - NSGM150GB120B transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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