IQAB75N60A1 Specs and Replacement
Type Designator: IQAB75N60A1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 357 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 288 pF
Package: TO247
IQAB75N60A1 Substitution - IGBT ⓘ Cross-Reference Search
IQAB75N60A1 datasheet
iqab75n60a1.pdf
IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5 s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp... See More ⇒
iqab75n60d1.pdf
IQAB75N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO-247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5 s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stable Parallel switching capabilit... See More ⇒
Specs: MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , MBQ40T65FDSC , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 .
Keywords - IQAB75N60A1 transistor spec
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