All IGBT. IQAB75N60A1 Datasheet

 

IQAB75N60A1 Datasheet and Replacement


   Type Designator: IQAB75N60A1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 357 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 288 pF
   Qg ⓘ - Total Gate Charge, typ: 470 nC
   Package: TO247
 

 IQAB75N60A1 substitution

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IQAB75N60A1 Datasheet (PDF)

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IQAB75N60A1

IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp

 5.1. Size:154K  iqxprz
iqab75n60d1.pdf pdf_icon

IQAB75N60A1

IQAB75N60D1PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in TO-247 Package Very high switching speed Very low VCE(sat) Short circuit withstand time - 5s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stable Parallel switching capabilit

Datasheet: MMG400D120B6HN , MMG450WB170B6EN , MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , SGT60U65FD1PT , IQAB75N60D1 , IQG1B150N120B4 , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 .

History: BT50T60ANFK

Keywords - IQAB75N60A1 transistor datasheet

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