All IGBT. HGTG40N60C3 Datasheet

 

HGTG40N60C3 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG40N60C3

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Collector Current |Ic|, A: 75

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG40N60C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG40N60C3 Datasheet (PDF)

5.1. hgtg40n60a4.pdf Size:160K _fairchild_semi

HGTG40N60C3
HGTG40N60C3

HGTG40N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching • 100kHz Operation At 390V, 40A device combining the best features of a MOSFET and a • 200kHz Operation At 390V, 20A bipolar transistor. This device has the high input impedance • 600V Switching SOA Capability of a MOSFET and the low on

5.2. hgtg40n60b3.pdf Size:138K _fairchild_semi

HGTG40N60C3
HGTG40N60C3

HGTG40N60B3 Data Sheet November 2004 File Number 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching • 70A, 600V, TC = 25oC device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. The device has the high input impedance of a • Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

 5.3. hgtg40n60b3.pdf Size:65K _harris_semi

HGTG40N60C3
HGTG40N60C3

S E M I C O N D U C T O R HGTG40N60B3 PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 • 70A, 600V at TC = +25oC E • Square Switching SOA Capability C G • Typical Fall Time - 160ns at +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the bes

Datasheet: HGTG30N60A4D , HGTG30N60B3 , HGTG30N60B3D , HGTG30N60C3 , HGTG30N60C3D , HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , STGW20NC60VD , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 .

 

 
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