HGTG40N60C3 Datasheet and Replacement

HGTG40N60C3Data Sheet December 200175A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oCimpedance

HGTG40N60C3Data Sheet January 2000 File Number 4472.275A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60C3 is a MOS gated high voltage switching 75A, 600V, TC = 25oCdevice combining the best features of a MOSFET and a 600V Switching SOA Capabilitybipolar transistor. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 1

HGTG40N60A4Data Sheet August 2003 File Number600V, SMPS Series N-Channel IGBT FeaturesThe HGTG40N60A4 is a MOS gated high voltage switching 100kHz Operation At 390V, 40Adevice combining the best features of a MOSFET and a 200kHz Operation At 390V, 20Abipolar transistor. This device has the high input impedance 600V Switching SOA Capabilityof a MOSFET and the low on

HGTG40N60B3Data Sheet November 2004 File Number70A, 600V, UFS Series N-Channel IGBT FeaturesThe HGTG40N60B3 is a MOS gated high voltage switching 70A, 600V, TC = 25oCdevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. The device has the high input impedance of a Typical Fall Time. . . . . . . . . . . . . . . . 100ns at

S E M I C O N D U C T O R HGTG40N60B3PRELIMINARY70A, 600V, UFS Series N-Channel IGBTMay 1995Features PackageJEDEC STYLE TO-247 70A, 600V at TC = +25oCE Square Switching SOA CapabilityCG Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction LossDescriptionThe HGTG40N60B3 is a MOS gated high voltage switchingdevice combining the bes