IQGB150N120GA4 IGBT. Datasheet pdf. Equivalent
Type Designator: IQGB150N120GA4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 91 nS
Coesⓘ - Output Capacitance, typ: 800 pF
Qgⓘ - Total Gate Charge, typ: 1560 nC
Package: MODULE
IQGB150N120GA4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IQGB150N120GA4 Datasheet (PDF)
iqgb150n120ga4.pdf
IQGB150N120GA4PRELIMINARY DATASHEETIGBT Module in iQPak 2 PackagePFC-Boost configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector current I 30
iqgb150n120gb4.pdf
IQGB150N120GB4PRELIMINARY DATASHEETIGBT Module in iQPak2 PackagePFC-Buck configuration Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector current I 300
iqgb150n120i4.pdf
IQGB150N120I4PRELIMINARY DATASHEET1200V 150A, IGBT Module in iQpak 2PackageHalf-Bridge Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS (per Leg) , at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector currentI 150CoT =80 CCPeak collector c
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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