IXYN100N120B3H1 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYN100N120B3H1 Specs and Replacement

Type Designator: IXYN100N120B3H1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 690 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 165 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 367 pF

Package: SOT227

IXYN100N120B3H1 Substitution

- IGBT ⓘ Cross-Reference Search

IXYN100N120B3H1 datasheet

0.1. Size:184K ixys
ixyn100n120b3h1.pdf pdf_icon

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYN100N120B3H1 GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES... See More ⇒

3.1. Size:226K ixys
ixyn100n120c3h1.pdf pdf_icon

1200V XPTTM IGBT VCES = 1200V IXYN100N120C3H1 GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching E SOT-227B, miniBLOC Symbol Test Conditions Maximum Ratings E153432 VCES TJ = 25 C to 150 C 1200 V E VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES C... See More ⇒

3.2. Size:241K ixys
ixyn100n120c3.pdf pdf_icon