IXYN100N120B3H1 Datasheet and Replacement
Type Designator: IXYN100N120B3H1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 690 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 165 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 367 pF
Package: SOT227
- IGBT Cross-Reference
IXYN100N120B3H1 Datasheet (PDF)
ixyn100n120b3h1.pdf

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES
ixyn100n120c3h1.pdf

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C
ixyn100n120c3.pdf

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - IXYN100N120B3H1 transistor datasheet
IXYN100N120B3H1 cross reference
IXYN100N120B3H1 equivalent finder
IXYN100N120B3H1 lookup
IXYN100N120B3H1 substitution
IXYN100N120B3H1 replacement
History: NCE30TD60BP | FD200R12PT4_B6



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