IXYN82N120C3 Datasheet and Replacement
Type Designator: IXYN82N120C3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 78 nS
Coesⓘ - Output Capacitance, typ: 285 pF
Package: SOT227
IXYN82N120C3 substitution
IXYN82N120C3 Datasheet (PDF)
ixyn82n120c3.pdf

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion
ixyn82n120c3h1.pdf

1200V XPTTM IGBT VCES = 1200VIXYN82N120C3H1GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continu
ixyn80n90c3h1.pdf

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYN80N90C3H1GenX3TM w/ Diode IC90 = 70A VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 900 VE VCGR TJ = 25C to 150C, RGE = 1M 900 VGVGES Continuous 20 VVGEM Tra
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXGT24N170AH1
Keywords - IXYN82N120C3 transistor datasheet
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History: IXGT24N170AH1



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