All IGBT. IXYN82N120C3 Datasheet

 

IXYN82N120C3 Datasheet and Replacement


   Type Designator: IXYN82N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 78 nS
   Coesⓘ - Output Capacitance, typ: 285 pF
   Package: SOT227
      - IGBT Cross-Reference

 

IXYN82N120C3 Datasheet (PDF)

 ..1. Size:428K  ixys
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IXYN82N120C3

N E W P R O D U C T B R I E FEfficiency Through Technology1200V XPT IGBTsExtreme-Light Punch-Through IGBTs for High-Speed Hard-Switching ApplicationsOctober 2012OVERVIEWTO-247IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica-tion

 0.1. Size:224K  ixys
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IXYN82N120C3

1200V XPTTM IGBT VCES = 1200VIXYN82N120C3H1GenX3TM w/ Diode IC110 = 46A VCE(sat) 3.2V tfi(typ) = 93nsHigh-Speed IGBTfor 20-50 kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continu

 9.1. Size:184K  ixys
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IXYN82N120C3

Advance Technical Information900V XPTTM IGBT VCES = 900VIXYN80N90C3H1GenX3TM w/ Diode IC90 = 70A VCE(sat) 2.7V tfi(typ) = 86nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 900 VE VCGR TJ = 25C to 150C, RGE = 1M 900 VGVGES Continuous 20 VVGEM Tra

Datasheet: IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , IXYN120N65B3D1 , IXYN120N65C3D1 , IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , FGH60N60SMD , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 , IXBF22N300 , IXBF28N300 , IXBF50N360 , IXBH10N300 .

History: 2N6977 | KE703A

Keywords - IXYN82N120C3 transistor datasheet

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