All IGBT. HGTG7N60A4D Datasheet

 

HGTG7N60A4D IGBT. Datasheet pdf. Equivalent


   Type Designator: HGTG7N60A4D
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G7N60A4D
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 34
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7(typ)
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 11
   Total Gate Charge (Qg), typ, nC: 37
   Package: TO247

 HGTG7N60A4D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTG7N60A4D Datasheet (PDF)

 ..1. Size:537K  onsemi
 hgtg7n60a4d hgtp7n60a4d hgt1s7n60a4ds.pdf

HGTG7N60A4D HGTG7N60A4D

SMPS Series N-ChannelIGBT with Anti-ParallelHyperfast Diode600 VHGTG7N60A4D,www.onsemi.comHGTP7N60A4D,HGT1S7N60A4DSThe HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DSare MOS gated high voltage switching devices combining the bestfeatures of MOSFETs and bipolar transistors. These devices have thehigh input impedance of a MOSFET and the low on-state conductionloss of a bipolar

 4.1. Size:531K  1
 hgtd7n60a4s hgtg7n60a4 hgtp7n60a4.pdf

HGTG7N60A4D HGTG7N60A4D

 4.2. Size:173K  fairchild semi
 hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf

HGTG7N60A4D HGTG7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

 4.3. Size:242K  onsemi
 hgt1s7n60a4s9a hgtg7n60a4 hgtp7n60a4.pdf

HGTG7N60A4D HGTG7N60A4D

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4Data Sheet September 2004600V, SMPS Series N-Channel IGBT FeaturesThe HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7Aare MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5Athe best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capabilitydevices have t

Datasheet: HGTG34N100E2 , HGTG40N60A4 , HGTG40N60B3 , HGTG40N60C3 , HGTG40N60C3R , HGTG5N120BND , HGTG5N120CND , HGTG7N60A4 , IRG4PC50UD , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D .

 

 
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