All IGBT. IXBH22N300HV Datasheet

 

IXBH22N300HV Datasheet and Replacement


   Type Designator: IXBH22N300HV
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 360 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Package: TO247HV
      - IGBT Cross-Reference

 

IXBH22N300HV Datasheet (PDF)

 ..1. Size:253K  ixys
 ixbh22n300hv.pdf pdf_icon

IXBH22N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 9.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH22N300HV

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 9.2. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH22N300HV

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 9.3. Size:69K  ixys
 ixbh28n170a ixbt28n170a.pdf pdf_icon

IXBH22N300HV

ADVANCE TECHNICAL INFORMATIONVCES = 1700 VHigh Voltage, High GainIXBH 28N170ABIMOSFETTM Monolithic IC25 = 30 AIXBT 28N170ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi = 50 nsSymbol Test Conditions Maximum Ratings TO-268 (IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VE(TAB)VGEM Transient 30 VIC25 TC = 25

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IKB40N65EF5 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | CM200DX-24S | NCE30TH60BP | CRG15T120BK3SD

Keywords - IXBH22N300HV transistor datasheet

 IXBH22N300HV cross reference
 IXBH22N300HV equivalent finder
 IXBH22N300HV lookup
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