IXBH22N300HV - аналоги и описание IGBT

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140

Advance Technical Information High Voltage, High Gain VCES = 3600V IXBT20N360HV BIMOSFETTM Monolithic IXBH20N360HV IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.4V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3600 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V VGES Continuous 20 V TO-247HV (IXBH) VGEM

ADVANCE TECHNICAL INFORMATION VCES = 1700 V High Voltage, High Gain IXBH 28N170A BIMOSFETTM Monolithic IC25 = 30 A IXBT 28N170A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor VCE(sat) 2.5V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C C (TAB) E VGEM Transient 30 V IC

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140

Advance Technical Information High Voltage, High Gain VCES = 1700V IXBH24N170 BIMOSFETTM Monolithic IXBT24N170 IC110 = 24A Bipolar MOS Transistor VCE(sat) 2.5V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C C (TAB) E VGEM Transient 30 V IC

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH2N250 BIMOSFETTM IXBT2N250 IC110 = 2A VCE(sat) 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V G C (TAB) C VGES Continuous 20 V E VGEM Transient 30 V IC

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH20N300 BIMOSFETTM Monolithic IXBT20N300 IC110 = 20A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 V Monolithic Bipolar IXBH 20N160 IC25 = 20 A MOS Transistor VCE(sat) = 4.7 V typ. N-Channel, Enhancement Mode tfi = 40 ns C TO-247 AD G G C C (TAB) E E G = Gate, C = Collector, E = Emitter, TAB = Collector Symbol Conditions Maximum Ratings Features 20N140 20N160 International standard package VCES TJ = 25 C to 150 C 140