IXBH42N250 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXBH42N250 Specs and Replacement

Type Designator: IXBH42N250

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 104 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃

tr ⓘ - Rise Time, typ: 330 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO247

IXBH42N250 Substitution

- IGBT ⓘ Cross-Reference Search

IXBH42N250 datasheet

..1. Size:206K ixys
ixbh42n250.pdf pdf_icon

Advance Technical Information High Voltage, High Gain VCES = 2500V IXBH42N250 BIMOSFETTM Monolithic IC110 = 42A Bipolar MOS Transistor VCE(sat) 3.0V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 2500 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E VGES Continuous 25 V G = Gate C = Collector VGEM Transient 35... See More ⇒

7.1. Size:116K ixys
ixbh42n170a.pdf pdf_icon

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH) ... See More ⇒

7.2. Size:175K ixys
ixbh42n170 ixbt42n170.pdf pdf_icon

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin... See More ⇒

7.3. Size:117K ixys
ixbh42n170a ixbt42n170a.pdf pdf_icon