IXBJ40N140 Datasheet and Replacement
Type Designator: IXBJ40N140
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 33 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 220 pF
Package: TO268
IXBJ40N140 substitution
IXBJ40N140 Datasheet (PDF)
ixbj40n140.pdf
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBJ 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 7.1 Vtfi = 40 nsN-Channel, Enhancement ModeCGESymbol Test Conditions Maximum Ratings40N140 40N160 TO-268VCES TJ = 25C to 150C 1400 1600 VGCVCGR TJ = 25C to 150C; RGE = 1 MW 1400 1600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30
ixbj40n140-160.pdf
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBJ 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 7.1 Vtfi = 40 nsN-Channel, Enhancement ModeCGESymbol Test Conditions Maximum Ratings40N140 40N160 TO-268VCES TJ = 25C to 150C 1400 1600 VGCVCGR TJ = 25C to 150C; RGE = 1 MW 1400 1600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30
ixbj40n160.pdf
High Voltage BIMOSFETTM IXBJ 40N140 VCES = 1400/1600 VMonolithic Bipolar IXBJ 40N160 IC25 = 33 AMOS Transistor VCE(sat) = 7.1 Vtfi = 40 nsN-Channel, Enhancement ModeCGESymbol Test Conditions Maximum Ratings40N140 40N160 TO-268VCES TJ = 25C to 150C 1400 1600 VGCVCGR TJ = 25C to 150C; RGE = 1 MW 1400 1600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30
Datasheet: IXBA16N170AHV , IXBH20N140 , IXBH20N160 , IXBH20N360HV , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IRG7R313U , IXBJ40N160 , IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV .
Keywords - IXBJ40N140 transistor datasheet
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