All IGBT. IXBT16N170AHV Datasheet

 

IXBT16N170AHV Datasheet and Replacement


   Type Designator: IXBT16N170AHV
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO268HV
      - IGBT Cross-Reference

 

IXBT16N170AHV Datasheet (PDF)

 ..1. Size:169K  ixys
 ixbt16n170ahv.pdf pdf_icon

IXBT16N170AHV

Advance Technical InformationHigh Voltage, High GainVCES = 1700VIXBA16N170AHVBIMOSFETTM MonolithicIXBT16N170AHVIC25 = 16ABipolar MOS TransistorVCE(sat) 6.0VTO-263HV (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VTO-268HV (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VVGEM

 3.1. Size:51K  ixys
 ixbh16n170a ixbt16n170a.pdf pdf_icon

IXBT16N170AHV

Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1

 3.2. Size:50K  ixys
 ixbt16n170a.pdf pdf_icon

IXBT16N170AHV

Advanced Technical InformationHigh Voltage, High Gain IXBH 16N170A VCES = 1700 VBIMOSFETTM MonolithicIXBT 16N170A IC25 = 16 ABipolar MOS TransistorVCE(sat) = 6.0 Vtfi(typ) = 50 nsSymbol Test Conditions Maximum Ratings TO-268(IXBT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 MW 1700 VGEVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C1

 4.1. Size:174K  ixys
 ixbt16n170.pdf pdf_icon

IXBT16N170AHV

High Voltage, High GainVCES = 1700VIXBH16N170BIMOSFETTM MonolithicIXBT16N170IC90 = 16ABipolar MOS TransistorVCE(sat) 3.3VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 1700 VVCGR TJ = 25C to 150C, RGE = 1M 1700 VGVGES Continuous 20 VC (TAB)CEVGEM Transient 30 VIC25 TC = 25C 40 ATO-268 (IXBT

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Keywords - IXBT16N170AHV transistor datasheet

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