IXBT16N170AHV - аналоги, параметры транзистора

IXBT16N170AHV даташит

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Advance Technical Information High Voltage, High Gain VCES = 1700V IXBA16N170AHV BIMOSFETTM Monolithic IXBT16N170AHV IC25 = 16A Bipolar MOS Transistor VCE(sat) 6.0V TO-263HV (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V TO-268HV (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V VGEM

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Advanced Technical Information High Voltage, High Gain IXBH 16N170A VCES = 1700 V BIMOSFETTM Monolithic IXBT 16N170A IC25 = 16 A Bipolar MOS Transistor VCE(sat) = 6.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1700 V G E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C1

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High Voltage, High Gain VCES = 1700V IXBH16N170 BIMOSFETTM Monolithic IXBT16N170 IC90 = 16A Bipolar MOS Transistor VCE(sat) 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V G VGES Continuous 20 V C (TAB) C E VGEM Transient 30 V IC25 TC = 25 C 40 A TO-268 (IXBT

Другие IGBT... IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 , IXBL20N300C , IXBL60N360 , IXBT12N300HV , IKW50N60T , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 .