IXBV22N300S Datasheet and Replacement
Type Designator: IXBV22N300S
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 360 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: PLUS220SMDHV
IXBV22N300S substitution
IXBV22N300S Datasheet (PDF)
ixbv22n300s.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBV22N300SBIMOSFETTM MonolithicIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VPLUS220SMDHVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C
Datasheet: IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , CRG15T120BNR3S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 .
History: IRG4P254S | SKM300GA123D
Keywords - IXBV22N300S transistor datasheet
IXBV22N300S cross reference
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IXBV22N300S lookup
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History: IRG4P254S | SKM300GA123D
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