All IGBT. IXBV22N300S Datasheet

 

IXBV22N300S IGBT. Datasheet pdf. Equivalent

Type Designator: IXBV22N300S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 290

Maximum Collector-Emitter Voltage |Vce|, V: 3000

Collector-Emitter saturation Voltage |Vcesat|, V: 2.7

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 360

Maximum Collector Capacity (Cc), pF: 85

Package: PLUS220SMDHV

IXBV22N300S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBV22N300S Datasheet (PDF)

1.1. ixbv22n300s.pdf Size:198K _igbt

IXBV22N300S
IXBV22N300S

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBV22N300S BIMOSFETTM Monolithic IC110 = 22A Bipolar MOS Transistor  VCE(sat)  2.7V    PLUS220SMDHV Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M 3000 V G E VGES Continuous ± 20 V C (Tab) VGEM Transient ± 30 V IC25 TC = 25°C

Datasheet: IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , RJP30E2DPP-M0 , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 .

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IXBV22N300S
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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |