IXBV22N300S Datasheet and Replacement

   Type Designator: IXBV22N300S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 360 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: PLUS220SMDHV
      - IGBT Cross-Reference