IXBV22N300S Specs and Replacement
Type Designator: IXBV22N300S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 360 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: PLUS220SMDHV IXBV22N300S Substitution - IGBT ⓘ Cross-Reference Search
IXBV22N300S datasheet
ixbv22n300s.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBV22N300S BIMOSFETTM Monolithic IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V PLUS220SMDHV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C ... See More ⇒
Specs: IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , FGPF4633 , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 .
Keywords - IXBV22N300S transistor spec
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