All IGBT. IXBV22N300S Datasheet

 

IXBV22N300S IGBT. Datasheet pdf. Equivalent


   Type Designator: IXBV22N300S
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 360 nS
   Coesⓘ - Output Capacitance, typ: 85 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: PLUS220SMDHV

 IXBV22N300S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXBV22N300S Datasheet (PDF)

 ..1. Size:198K  ixys
 ixbv22n300s.pdf

IXBV22N300S IXBV22N300S

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBV22N300SBIMOSFETTM MonolithicIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VPLUS220SMDHVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C

Datasheet: IXBL20N300C , IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , CRG15T120BNR3S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 .

 

 
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