IXBX28N300HV Specs and Replacement
Type Designator: IXBX28N300HV
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 62 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 412 nS
Coesⓘ - Output Capacitance, typ: 87 pF
Package: TO247HV IXBX28N300HV Substitution - IGBT ⓘ Cross-Reference Search
IXBX28N300HV datasheet
ixbx28n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBX28N300HV BIMOSFETTM Monolithic IC110 = 28A Bipolar MOS Transistor VCE(sat) 2.7V TO-247PLUS-HV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G E VGES Continuous 20 V Tab C VGEM Transient 30 V IC25 TC = 25 C 6... See More ⇒
ixbx25n250.pdf
High Voltage, High Gain VCES = 2500V IXBX25N250 BIMOSFETTM Monolithic IC90 = 25A Bipolar MOS Transistor VCE(sat) 3.3V Symbol Test Conditions Maximum Ratings PLUS247TM VCES TC = 25 C to 150 C 2500 V VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C 55 A C Tab E IC90 TC = 90 C 25 A ICM TC = 2... See More ⇒
Specs: IXBL60N360 , IXBT12N300HV , IXBT16N170AHV , IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , CRG15T120BNR3S , IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 .
Keywords - IXBX28N300HV transistor spec
IXBX28N300HV cross reference
IXBX28N300HV equivalent finder
IXBX28N300HV lookup
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