IXBX28N300HV Datasheet and Replacement
Type Designator: IXBX28N300HV
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 3000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 62 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 412 nS
Coesⓘ - Output Capacitance, typ: 87 pF
Package: TO247HV
- IGBT Cross-Reference
IXBX28N300HV Datasheet (PDF)
ixbx28n300hv.pdf

Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBX28N300HVBIMOSFETTM MonolithicIC110 = 28ABipolar MOS TransistorVCE(sat) 2.7VTO-247PLUS-HVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VTabCVGEM Transient 30 VIC25 TC = 25C 6
ixbx25n250.pdf

High Voltage, High GainVCES = 2500VIXBX25N250BIMOSFETTM MonolithicIC90 = 25ABipolar MOS TransistorVCE(sat) 3.3VSymbol Test Conditions Maximum RatingsPLUS247TMVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C 55 ACTabEIC90 TC = 90C 25 AICM TC = 2
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: IXBH9N140 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | MSG15T65FLT | MII300-12A4 | CRG15T120BK3SD
Keywords - IXBX28N300HV transistor datasheet
IXBX28N300HV cross reference
IXBX28N300HV equivalent finder
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History: IXBH9N140 | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | MSG15T65FLT | MII300-12A4 | CRG15T120BK3SD



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