All IGBT. IXCK36N250 Datasheet

 

IXCK36N250 Datasheet and Replacement


   Type Designator: IXCK36N250
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 595 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 73 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 580 nS
   Coesⓘ - Output Capacitance, typ: 170 pF
   Package: TO264
      - IGBT Cross-Reference

 

IXCK36N250 Datasheet (PDF)

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IXCK36N250

High VoltageVCES = 2500VIXCH36N250BIMOSFETTM MonolithicIXCK36N250IC110 = 36ABipolar MOS TransistorVCE(sat) 3.3VExtended FBSOATO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC TabVGES Continuous 25 VEVGEM Transient 35 VTO-264IC25 TC = 25C 73 AIC110

Datasheet: IXBT20N300HV , IXBT20N360HV , IXBT22N300HV , IXBT42N300HV , IXBV22N300S , IXBX28N300HV , IXBX50N360HV , IXCH36N250 , SGH80N60UFD , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB .

History: IXXH100N60B3

Keywords - IXCK36N250 transistor datasheet

 IXCK36N250 cross reference
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