IXCK36N250 Datasheet and Replacement
Type Designator: IXCK36N250
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 595 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 73 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 580 nS
Coesⓘ - Output Capacitance, typ: 170 pF
Package: TO264
IXCK36N250 substitution
IXCK36N250 Datasheet (PDF)
ixck36n250.pdf
High VoltageVCES = 2500VIXCH36N250BIMOSFETTM MonolithicIXCK36N250IC110 = 36ABipolar MOS TransistorVCE(sat) 3.3VExtended FBSOATO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC TabVGES Continuous 25 VEVGEM Transient 35 VTO-264IC25 TC = 25C 73 AIC110
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AOGF60B65H2AL
Keywords - IXCK36N250 transistor datasheet
IXCK36N250 cross reference
IXCK36N250 equivalent finder
IXCK36N250 lookup
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History: AOGF60B65H2AL
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