IXGQ170N30PB PDF and Equivalents Search

 

IXGQ170N30PB Specs and Replacement

Type Designator: IXGQ170N30PB

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 330 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 170 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 71 nS

Coesⓘ - Output Capacitance, typ: 315 pF

Package: TO3P

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IXGQ170N30PB datasheet

 ..1. Size:108K  ixys
 ixgq170n30pb.pdf pdf_icon

IXGQ170N30PB

Preliminary Technical Information PolarTM High Speed VCES = 300 V IXGQ170N30PB ICP = 360 A IGBT VCE(sat) 1.70 V for PDP Applications Symbol Test Conditions Maximum Ratings TO-3P VCES TJ = 25 C to 150 C 300 V VGEM 30 V G IC25 TC = 25 C, IGBT chip capability 170 A C E (TAB) ICP TJ 150 C, tp ... See More ⇒

Specs: IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , RJH60F7BDPQ-A0 , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 .

History: IXGQ90N27PB

Keywords - IXGQ170N30PB transistor spec

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