All IGBT. IXGQ170N30PB Datasheet

 

IXGQ170N30PB Datasheet and Replacement


   Type Designator: IXGQ170N30PB
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 170 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 71 nS
   Coesⓘ - Output Capacitance, typ: 315 pF
   Package: TO3P
      - IGBT Cross-Reference

 

IXGQ170N30PB Datasheet (PDF)

 ..1. Size:108K  ixys
 ixgq170n30pb.pdf pdf_icon

IXGQ170N30PB

Preliminary Technical InformationPolarTM High SpeedVCES = 300 VIXGQ170N30PBICP = 360 AIGBTVCE(sat) 1.70 Vfor PDP ApplicationsSymbol Test Conditions Maximum RatingsTO-3PVCES TJ = 25C to 150C 300 VVGEM 30 VGIC25 TC = 25C, IGBT chip capability 170 ACE(TAB)ICP TJ 150C, tp

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGH40N60B2D1 | 7MBP100VDA060-50 | ISL9V5036P3 | DIM800XSM45-TS | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH

Keywords - IXGQ170N30PB transistor datasheet

 IXGQ170N30PB cross reference
 IXGQ170N30PB equivalent finder
 IXGQ170N30PB lookup
 IXGQ170N30PB substitution
 IXGQ170N30PB replacement

 

 
Back to Top

 


 
.