All IGBT. IXGQ170N30PB Datasheet

 

IXGQ170N30PB Datasheet and Replacement


   Type Designator: IXGQ170N30PB
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 330 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 170 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 71 nS
   Coesⓘ - Output Capacitance, typ: 315 pF
   Package: TO3P
 

 IXGQ170N30PB substitution

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IXGQ170N30PB Datasheet (PDF)

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IXGQ170N30PB

Preliminary Technical InformationPolarTM High SpeedVCES = 300 VIXGQ170N30PBICP = 360 AIGBTVCE(sat) 1.70 Vfor PDP ApplicationsSymbol Test Conditions Maximum RatingsTO-3PVCES TJ = 25C to 150C 300 VVGEM 30 VGIC25 TC = 25C, IGBT chip capability 170 ACE(TAB)ICP TJ 150C, tp

Datasheet: IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , STGB10NB37LZ , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 .

History: BSM300GA170DN2

Keywords - IXGQ170N30PB transistor datasheet

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